Development of Novel Carbon Sources to Strengthen and Toughen Carbon-Containing Refractories
The synthesis was carried out in an enclosed crucible where the EG was placed above the silicon powders. The partial pressure and variety of Si-containing gaseous were controlled by adjusting the growth atmosphere and firing temperature. The Vapour-Solid (VS) mechanism is the predominant one for the growth of β-SiC whiskers and SiOx spheres. With addition of the
above novel sources into Al2O3–C refractories, the mechanical properties increased dramatically, which was attributed to the enhanced interfacial bonding strength between EG and matrix.