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The Microstructure Design of the Bonding System and Novel Technical Routes for Si3N4-Bonded SiC-Refractories

The so-called Si3N4/SiC-bonded SiC-refractories were fabricated via introducing carbon sources into the matrix, with the reaction of carbon and free-Si during nitridation. The results indicated that the optimal nitridation degree and bonded morphology in matrix were achieved in the sample by adding carbon black. They both led to the further improvement in the properties of the final products. Furthermore, from a commercial perspective, there was a considerable impetus to develop low cost methods and simplify the existing technology. So the second objective was to establish a simplified sintering condition and suitable sintering additives for fabricating self-reaction bonded SiC-refractories. Here the alternative sintering atmosphere (in graphite bed) in combination with ferrosilicon was employed. This work was a meaningful attempt with an interesting result. The optimization in the processing and formulation was developed under controlling costs. So it has a potential application and feasibility in the refractory industry.


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